 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CLE331E Aluminum Gallium Arsenide IRED Point source Die 1,8 0,15 0.130 (3.30) max (0.071 0.006) 25,4 MIN (1.0) 1.00 (25.4) min. 0,7 0,1 (0.0280.004) 0.050 (1.27) max (R) Clairex 0.213 (5.41) O5,41 (0.213) O5,26 (0.207) 0.207 (5.26) Technologies, Inc. December, 1998 0.100 (2.54) O2,54 (0.10) pin circle ANODE 0.169 (4.29) O4,29 (0.169) O4,14 (0.163) 0.163 (4.14) CATHODE 0,25 NOM (0.010) 0.010 (0.25) nom 0.019 (0.48) O0,48 (0.189) 0.016 (0.41) O0,41 (0.161) 3,73 (0.147) 0.147 (3.73) 3,48 (0.137) 0.137 (3.48) ALL DIMENSIONS ARE IN MILLIMETERS (INCHES) Case 6 features * * * * * * * high power output 850nm wavelength > 10MHz operation TO-46 epoxy-dome lens wide beam angle uniform output radiation pattern 0.002" dia. point source junction absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ...................................................................... -40C to +125C operating temperature ................................................................... -40C to +100C lead soldering temperature(1) ......................................................................... 260C (2) continuous forward current ........................................................................ 100mA peak forward current (1.0ms pulse width, 10% duty cycle).................................. 1A reverse voltage .................................................................................................... 5V continuous power dissipation(3) .................................................................... 200mW 1. 2. 3. 0.06" (1.5mm) from the header for 5 seconds maximum. Derate linearly 1.07mA/C from 25C free air temperature to TA = +100C. Derate linearly 2.13mW/C from 25C free air temperature to TA = +100C. description The CLE331E is an advanced, high efficiency, high speed, point source, AlGaAs infrared-emitting diode intended for applications requiring a uniform output radiation pattern. The point source die junction is typically 0.002" dia. and provides a uniform radiation pattern without the usual bond wire shadow effect. notes: electrical characteristics (TA = 25C unless otherwise noted) symbol PO VF IR P BW parameter Total power output(4) Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power points min - typ 1.5 850 60 max 2.2 10 - units mW V A nm nm test conditions IF = 100mA IF = 100mA VR = 3V IF = 100mA IF = 100mA Emission angle at half power points 100 deg. IF = 100mA HP tr, tf Radiation rise and fall time 5.0 ns IF = 100mA, f = 1kHz, D.C.= 50% note: 4. Other ranges of power output and test conditions can be specified. Call Clairex for applications assistance. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/15/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
Price & Availability of CLE331E
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |